Marked enhancement in the efficiency of deep ultraviolet light-emitting diodes by using a Al x Ga1-x N carrier reservoir layer - 先进材料平台 | LabXing

array(2) { ["lab"]=> string(4) "1058" ["publication"]=> string(4) "8537" } Marked enhancement in the efficiency of deep ultraviolet light-emitting diodes by using a Al x Ga1-x N carrier reservoir layer - 先进材料平台 | LabXing

先进材料平台

简介面向应用的先进材料及器件制备

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Marked enhancement in the efficiency of deep ultraviolet light-emitting diodes by using a Al x Ga1-x N carrier reservoir layer

2019

期刊 Applied Physics Express

作者 Longfei He · Wei Zhao · Kang Zhang · Chenguang He · Hualong Wu · Xiaoyan Liu · Xingjun Luo · Shuti Li · Zhitao Chen

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卷 12
期 6
页码 062013
Japan Society of Applied Physics
ISSN: 1882-0778
DOI: 10.7567/1882-0786/ab22df

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