恭喜赵淑景硕士的文章“Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure”发表在IEEE TED上
赵淑景硕士的IEEE TED文章发表
创建: Mar 04, 2022 | 18:20
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恭喜赵淑景硕士的文章“Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure”发表在IEEE TED上