Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories

array(2) { ["lab"]=> string(4) "1176" ["publication"]=> string(4) "9772" } Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories - 单粒子效应研究组 | LabXing

单粒子效应研究组

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2019

期刊 Microelectronics Reliability

作者 Ya-Nan Yin · Jie Liu · Tian-Qi Liu · Bing Ye · Qing-Gang Ji · You-Mei Sun · Xin-Jie Zhou

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卷 102
页码 113450
Elsevier BV
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2019.113450

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单粒子效应研究组

Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories

Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories